366 citations · 588 across the 7 of their papers we have counts for
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Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning
Theresia Knobloch, Burkay Uzlu, Yury Yu. Illarionov +7
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability.…
On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices
Theresia Knobloch, Yury Yu. Illarionov, Fabian Ducry +8
Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements f…
Meeting the Scaling Challenge for Post-Silicon Nanoelectronics using CaF2 Insulators
Yury Yu. Illarionov, Alexander G. Banshchikov, Dmitry K. Polyushkin +10
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can n…