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20162019
most citedOpto-Electronic Characterization of Three Dimensional Topological Insulators

32 citations · 44 across the 3 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

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cond-mat.mes-hall2018★ 5 cited

Thickness dependence of electron-electron interactions in topological p-n junctions

Dirk Backes, Danhong Huang, Rhodri Mansell +7

Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying rel…

cond-mat.mes-hall2017

Electrical resistance of individual defects at a topological insulator surface

Felix Lüpke, Markus Eschbach, Tristan Heider +10

Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the t…

cond-mat.mes-hall2016

Reinventing Solid State Electronics: Harnessing Quantum Confinement in Bismuth Thin Films

Farzan Gity, Lida Ansari, Martin Lanius +4

Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materia…

cond-mat.mes-hall2016★ 32 cited

Opto-Electronic Characterization of Three Dimensional Topological Insulators

Helene Plank, Sergey N. Danilov, Vasily V. Bel'kov +6

We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the hi…

cond-mat.mes-hall2016

Topological states and phase transitions in SbTe-GeTe multilayers

Thuy-Anh Nguyen, Dirk Backes, Angadjit Singh +7

Topological insulators (TIs) are bulk insulators with exotic 'topologically protected' surface conducting modes. It has recently been pointed out that when stacked together, intera…

cond-mat.mes-hall2016

Disentangling surface and bulk transport in topological-insulator - junctions

D. Backes, D. Huang, R. Mansell +7

By combining -type and -type topological insulators, vertically stacked - junctions can be formed, allowing to position the Ferm…