25 citations · 84 across the 17 of their papers we have counts for
4 papers · 1 filter
Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs
Wei-Chih Cheng, Tao Fang, Siqi Lei +7
Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. Th…
Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD
Guangnan Zhou, Alejandra V. Cuervo Covian, Kwang Hong Lee +4
Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation…
A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques
Teren Liu, Tao Fang, Karen Kavanagh +2
This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch se…
Interdiffusion in Group IV Semiconductor Material Systems: Applications, Research Methods and Discoveries
Guangrui, Xia
Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic…