25 citations · 84 across the 17 of their papers we have counts for
17 papers
Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates
Jia Guo, Yunlong Zhao, Markus Feifel +7
We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch pa…
Theoretical study of small signal modulation behavior of Fabry-Perot Germanium-on-Silicon lasers
Ying Zhu, Liming Wang, Zhiqiang Li +2
This work investigated the small signal performance of Fabry-Perot Ge-on-Si lasers by modeling and simulations. The 3dB bandwidth dependence on the structure parameters such as pol…
Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates
Yunlong Zhao, Jia Guo, Markus Feifel +8
High quality 940 nm AlGaAs n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivi…
Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs
Wei-Chih Cheng, Tao Fang, Siqi Lei +7
Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. Th…
Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD
Guangnan Zhou, Alejandra V. Cuervo Covian, Kwang Hong Lee +4
Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation…
A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques
Teren Liu, Tao Fang, Karen Kavanagh +2
This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch se…
Interdiffusion in Group IV Semiconductor Material Systems: Applications, Research Methods and Discoveries
Guangrui, Xia
Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic…
Experiments and Modeling of Mass Transport Phenomena in SiGe Devices
Guangrui, Xia
Recent experiments and continuum modeling work on dopant diffusion and segregation, Si-Ge interdiffusion, and defect engineering in SiGe material systems are reviewed. Doping impac…
The stability of exfoliated FeSe nanosheets during in-air device fabrication process
Rui Yang, Weijun Luo, Shun Chi +2
We studied the stability and superconductivity of FeSe nanosheets during an in-air device fabrication process. Methods were developed to improve the exfoliation yield and to mainta…
Interlayer coupling effect in twisted stacked few layer black phosphorus revealed by abnormal blue shifts in Raman spectra
Tao Fang, Teren Liu, Zenan Jiang +4
Twisted stacked few layer black phosphorus heterostructures were successfully fabricated in this work. Abnormal blue shifts in their Ag1 and Ag2 Raman peaks and unique optical refl…
Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation
Weijun Luo, Qian Song, Guangnan Zhou +2
We investigated 10 to 200 nm thick black phosphorus flakes on SiO2/Si and polyimide substrates by Angle-resolved Polarized Raman spectra (ARPRS) using 442 nm excitation wavelength.…
Stress engineering with silicon nitride stressors for Ge-on-Si lasers
Jiaxin Ke, Lukas Chrostowski, Guangrui Xia
Side and top silicon nitride stressors were proposed and shown to be effective ways to reduce the threshold current Ith and improve the wall-plug efficiency ηwp of Ge-on-Si lasers.…
Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration
Feiyang Cai, Dalaver H. Anjum, Xixiang Zhang +2
Si-Ge interdiffusion with a high phosphorus doping level was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0.75<x_Ge<1 , a mid-10^18 to…
On the Origins of Near-Surface Stresses in Silicon around Cu-filled and CNT-filled Through Silicon Vias
Ye Zhu, Kaushik Ghosh, Hong Yu Li +3
Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temp…
Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping
Yiheng Lin, Wei Shi, Jizhong Li +8
High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (AR…
Thermal Sublimation: a Scalable and Controllable Thinning Method for the Fabrication of Few-Layer Black Phosphorus
Weijun Luo, Rui Yang, Jialun Liu +4
In this work, we reported uniform layer-by-layer sublimation of black phosphorus under heating below 600 K. The uniformity and crystallinity of BP samples after thermal thinning we…
Design Considerations of Biaxially Tensile-Strained Germanium-on-Silicon Lasers
Xiyue Li, Zhiqiang Li, Simon Li +2
Physical models of Ge energy band structure and material loss were implemented in LASTIP(TM), a 2D simulation tool for edge emitting laser diodes. The model calculation is able to…