25 citations · 84 across the 17 of their papers we have counts for
17 papers
Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates
Jia Guo, Yunlong Zhao, Markus Feifel +7
We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch pa…
Theoretical study of small signal modulation behavior of Fabry-Perot Germanium-on-Silicon lasers
Ying Zhu, Liming Wang, Zhiqiang Li +2
This work investigated the small signal performance of Fabry-Perot Ge-on-Si lasers by modeling and simulations. The 3dB bandwidth dependence on the structure parameters such as pol…
Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates
Yunlong Zhao, Jia Guo, Markus Feifel +8
High quality 940 nm AlGaAs n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivi…
Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs
Wei-Chih Cheng, Tao Fang, Siqi Lei +7
Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. Th…
Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD
Guangnan Zhou, Alejandra V. Cuervo Covian, Kwang Hong Lee +4
Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation…
A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques
Teren Liu, Tao Fang, Karen Kavanagh +2
This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch se…