1 citations · 2 across the 3 of their papers we have counts for
7 papers
Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs
Wei-Chih Cheng, Tao Fang, Siqi Lei +7
Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. Th…
Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD
Guangnan Zhou, Alejandra V. Cuervo Covian, Kwang Hong Lee +4
Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation…
A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques
Teren Liu, Tao Fang, Karen Kavanagh +2
This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch se…
Interdiffusion in Group IV Semiconductor Material Systems: Applications, Research Methods and Discoveries
Guangrui, Xia
Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic…
Experiments and Modeling of Mass Transport Phenomena in SiGe Devices
Guangrui, Xia
Recent experiments and continuum modeling work on dopant diffusion and segregation, Si-Ge interdiffusion, and defect engineering in SiGe material systems are reviewed. Doping impac…
The stability of exfoliated FeSe nanosheets during in-air device fabrication process
Rui Yang, Weijun Luo, Shun Chi +2
We studied the stability and superconductivity of FeSe nanosheets during an in-air device fabrication process. Methods were developed to improve the exfoliation yield and to mainta…