25 citations · 84 across the 17 of their papers we have counts for
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Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation
Weijun Luo, Qian Song, Guangnan Zhou +2
We investigated 10 to 200 nm thick black phosphorus flakes on SiO2/Si and polyimide substrates by Angle-resolved Polarized Raman spectra (ARPRS) using 442 nm excitation wavelength.…
Stress engineering with silicon nitride stressors for Ge-on-Si lasers
Jiaxin Ke, Lukas Chrostowski, Guangrui Xia
Side and top silicon nitride stressors were proposed and shown to be effective ways to reduce the threshold current Ith and improve the wall-plug efficiency ηwp of Ge-on-Si lasers.…
Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration
Feiyang Cai, Dalaver H. Anjum, Xixiang Zhang +2
Si-Ge interdiffusion with a high phosphorus doping level was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0.75<x_Ge<1 , a mid-10^18 to…
On the Origins of Near-Surface Stresses in Silicon around Cu-filled and CNT-filled Through Silicon Vias
Ye Zhu, Kaushik Ghosh, Hong Yu Li +3
Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temp…
Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping
Yiheng Lin, Wei Shi, Jizhong Li +8
High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (AR…
Thermal Sublimation: a Scalable and Controllable Thinning Method for the Fabrication of Few-Layer Black Phosphorus
Weijun Luo, Rui Yang, Jialun Liu +4
In this work, we reported uniform layer-by-layer sublimation of black phosphorus under heating below 600 K. The uniformity and crystallinity of BP samples after thermal thinning we…