122 citations · 522 across the 19 of their papers we have counts for
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Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion
Oliver Brandt, Vladimir M. Kaganer, Jonas Lähnemann +8
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier s…
Carrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volume
Uwe Jahn, Vladimir M. Kaganer, Karl K. Sabelfeld +8
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution o…
Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN: effects of surface electric fields
T. Auzelle, M. Azadmand, T. Flissikowski +8
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formatio…