122 citations · 522 across the 19 of their papers we have counts for
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Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)
Carsten Pfüller, Pierre Corfdir, Christian Hauswald +9
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be pa…
Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime
Jonas Lähnemann, Timur Flissikowski, Martin Wölz +4
Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demo…
Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN
Felix Feix, Timur Flissikowski, Caroline Chèze +3
We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both…
Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots
Pierre Corfdir, Hanno Küpers, Ryan B. Lewis +4
We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Stron…
Radial Stark effect in (In,Ga)N nanowires
Jonas Lähnemann, Pierre Corfdir, Felix Feix +5
We study the luminescence of unintentionally doped and Si-doped InGaN nanowires with a low In content (x<0.2) grown by molecular beam epitaxy on Si substrates. The emis…