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cond-mat.mtrl-sci2017★ 16 cited
Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature
C. Chèze, F. Feix, J. Lähnemann +6
N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhi…
cond-mat.mes-hall2017★ 14 cited
Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency
F. Feix, T. Flissikowski, K. K. Sabelfeld +5
We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN nanowires…