48 citations · 78 across the 4 of their papers we have counts for
Showing cond-mat.mtrl-sciShow all
3 papers · 1 filter
cond-mat.mtrl-sci2021★ 7 cited
Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements
K. Yokoyama, J. S. Lord, J. Miao +2
Muons, as a bulk probe of materials, have been used to study the depth profile of charge carrier kinetics in Si wafers by scanning the muon implantation depth. The photoexcited muo…
cond-mat.mtrl-sci2019★ 6 cited
Muon probes of temperature-dependent charge carrier kinetics in semiconductors
K. Yokoyama, J. S. Lord, P. W. Mengyan +2
We have applied the photoexcited muon spin spectroscopy technique (photo-SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier ki…
cond-mat.mtrl-sci2017★ 17 cited
A new method for measuring excess carrier lifetime in bulk silicon: Photoexcited muon spin spectroscopy
K. Yokoyama, J. S. Lord, J. Miao +2
We have measured the optically injected excess carrier lifetime in silicon using photoexcited muon spin spectroscopy. Positive muons implanted deep in a wafer can interact with the…