48 citations · 78 across the 4 of their papers we have counts for
4 papers
Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements
K. Yokoyama, J. S. Lord, J. Miao +2
Muons, as a bulk probe of materials, have been used to study the depth profile of charge carrier kinetics in Si wafers by scanning the muon implantation depth. The photoexcited muo…
Muon probes of temperature-dependent charge carrier kinetics in semiconductors
K. Yokoyama, J. S. Lord, P. W. Mengyan +2
We have applied the photoexcited muon spin spectroscopy technique (photo-SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier ki…
A new method for measuring excess carrier lifetime in bulk silicon: Photoexcited muon spin spectroscopy
K. Yokoyama, J. S. Lord, J. Miao +2
We have measured the optically injected excess carrier lifetime in silicon using photoexcited muon spin spectroscopy. Positive muons implanted deep in a wafer can interact with the…
Enhancement of muonium emission rate from silica aerogel with a laser ablated surface
G. A. Beer, Y. Fujiwara, S. Hirota +24
Emission of muonium () atoms from a laser-processed aerogel surface into vacuum was studied for the first time. Laser ablation was used to create hole-like regions with dia…