33 citations · 92 across the 8 of their papers we have counts for
8 papers
Simplified EPFL GaN HEMT Model
Farzan Jazaeri, Majid Shalchian, Ashkhen Yesayan +4
This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying o…
High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities
Viros Sriskaran, Jerome Alozy, Rafael Ballabriga +10
The Medipix4 chip is the latest member in the Medipix/Timepix family of hybrid pixel detector chips aimed at high-rate spectroscopic X-ray imaging using high-Z materials. It can be…
Non-Hysteretic Condition in Negative Capacitance Junctionless FETs
Amin Rassekh, Farzan Jazaeri, Jean-Michel Sallese
This paper analyzes the design space stability of negative capacitance double gate junctionless FETs (NCDG JLFET). Using analytical expressions derived from a charge-based model, w…
Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect
Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri +2
In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-ba…
A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics
Farzan Jazaeri, Arnout Beckers, Armin Tajalli +1
Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts…
Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects
Amin Rassekh, Farzan Jazaeri, Morteza Fathipour +1
In this paper, an analytical predictive model of interface charge traps in symmetric long channel double-gate junctionless transistors is proposed based on a charge-based model. In…
Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement
Majid Shalchian, Farzan Jazaeri, Jean-Michel Sallese
This paper presents a generalization of the charge-based model for ultrathin junctionless double-gate (JLDG) field-effect transistors (FETs) by including quantum electron density.…
An Extra Electrostatic Energy in Semiconductors and its Impact in Nanostructures
Jean-Michel Sallese
This work revisits the classical concept of electric energy and suggests that the common definition is likely to generate large errors when dealing with nanostructures. For instanc…