2 citations · 3 across the 2 of their papers we have counts for
4 papers · 1 filter
Simplified EPFL GaN HEMT Model
Farzan Jazaeri, Majid Shalchian, Ashkhen Yesayan +4
This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying o…
Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect
Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri +2
In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-ba…
Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects
Amin Rassekh, Farzan Jazaeri, Morteza Fathipour +1
In this paper, an analytical predictive model of interface charge traps in symmetric long channel double-gate junctionless transistors is proposed based on a charge-based model. In…
Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement
Majid Shalchian, Farzan Jazaeri, Jean-Michel Sallese
This paper presents a generalization of the charge-based model for ultrathin junctionless double-gate (JLDG) field-effect transistors (FETs) by including quantum electron density.…