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20152024
most citedCharge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement

33 citations · 92 across the 8 of their papers we have counts for

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physics.app-ph2020

Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri +2

In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-ba…