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physics.app-ph2019
Lateral Heterojunction BaTiO3/AlGaN Diodes with >8MV/cm Breakdown Field
Towhidur Razzak, Hareesh Chandrasekar, Kamal Hussain +11
In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extrem…
physics.app-ph2019
Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors
Towhidur Razzak, Seongmo Hwang, Antwon Coleman +7
In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (U…