3 papers
cond-mat.mtrl-sci2020
Deep-recessed -GaO delta-doped field effect transistors with in situ epitaxial passivation
Chandan Joishi, Zhanbo Xia, John S. Jamison +4
We introduce a deep-recessed gate architecture in -GaO delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device desi…
physics.app-ph2019
Lateral Heterojunction BaTiO3/AlGaN Diodes with >8MV/cm Breakdown Field
Towhidur Razzak, Hareesh Chandrasekar, Kamal Hussain +11
In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extrem…
physics.app-ph2019
Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors
Towhidur Razzak, Seongmo Hwang, Antwon Coleman +7
In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (U…