Deep-recessed $\beta$-Ga${}_2$O${}_3$ delta-doped field effect transistors with in situ epitaxial passivation

Chandan Joishi, Zhanbo Xia, John S. Jamison +4

We introduce a deep-recessed gate architecture in $\beta$-Ga${}_2$O${}_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device desi…