412 citations · 486 across the 15 of their papers we have counts for
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Anionic disorder and its impact on the surface electronic structure of oxynitride photoactive semiconductors
Anna Hartl, Ján Minár, Procopios Constantinou +8
The conversion of solar energy into chemical energy, stored in the form of hydrogen, bears enormous potential as a sustainable fuel for powering emerging technologies. Photoactive…
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou +3
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical…
k-dependent proximity-induced modulation of spin-orbit interaction in MoSe2 interfaced with amorphous Pb
Fatima Alarab, Ján Minár, Procopios Constantinou +4
The ability to modulate the spin-orbit (SO) interaction is crucial for engineering a wide range of spintronics-based quantum devices, extending from state-of-the-art data storage t…
Direct observation of altermagnetic band splitting in CrSb thin films
Sonka Reimers, Lukas Odenbreit, Libor Smejkal +14
Altermagnetism represents an emergent collinear magnetic phase with compensated order and an unconventional alternating even-parity wave spin order in the non-relativistic band str…
Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon
Procopios Constantinou, Taylor J. Z. Stock, Eleanor Crane +11
Two-dimensional dopant layers (-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such…
Impact of static disorder on quasiparticle spectra: Debye-Waller, mean free path and potential fluctuation effects
Enrico Della Valle, Procopios Constantinou, Thorsten Schmitt +3
ARPES is a widely used characterization technique in condensed matter physics, providing direct access to the single-electron spectral function of crystals, including their electro…
Spatially resolved dielectric loss at the Si/SiO interface
Megan Cowie, Taylor J. Z. Stock, Procopios C. Constantinou +2
The Si/SiO interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-base…