412 citations · 486 across the 15 of their papers we have counts for
16 papers
Strong electron-electron interactions in a dilute weakly-localized metal near a metal-to-insulator transition
Nicolò D'Anna, Jamie Bragg, Aidan G. McConnell +12
Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candida…
Roadmap on Atomic-scale Semiconductor Devices
Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…
Element-specific, non-destructive profiling of layered heterostructures
Nicolò D'Anna, Jamie Bragg, Elizabeth Skoropata +16
Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightfor…
Anionic disorder and its impact on the surface electronic structure of oxynitride photoactive semiconductors
Anna Hartl, Ján Minár, Procopios Constantinou +8
The conversion of solar energy into chemical energy, stored in the form of hydrogen, bears enormous potential as a sustainable fuel for powering emerging technologies. Photoactive…
Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface
Megan Cowie, Procopios C. Constantinou, Neil J. Curson +2
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO interface. Our measurements demonstrate that two-state fluctuations are localize…
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou +3
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical…
k-dependent proximity-induced modulation of spin-orbit interaction in MoSe2 interfaced with amorphous Pb
Fatima Alarab, Ján Minár, Procopios Constantinou +4
The ability to modulate the spin-orbit (SO) interaction is crucial for engineering a wide range of spintronics-based quantum devices, extending from state-of-the-art data storage t…
Resistless EUV lithography: photon-induced oxide patterning on silicon
Li-Ting Tseng, Prajith Karadan, Dimitrios Kazazis +7
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading litho…
Direct observation of altermagnetic band splitting in CrSb thin films
Sonka Reimers, Lukas Odenbreit, Libor Smejkal +14
Altermagnetism represents an emergent collinear magnetic phase with compensated order and an unconventional alternating even-parity wave spin order in the non-relativistic band str…
Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon
Procopios Constantinou, Taylor J. Z. Stock, Eleanor Crane +11
Two-dimensional dopant layers (-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such…
Altermagnetic lifting of Kramers spin degeneracy
J. Krempaský, L. Šmejkal, S. W. D'Souza +20
Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applica…
Impact of static disorder on quasiparticle spectra: Debye-Waller, mean free path and potential fluctuation effects
Enrico Della Valle, Procopios Constantinou, Thorsten Schmitt +3
ARPES is a widely used characterization technique in condensed matter physics, providing direct access to the single-electron spectral function of crystals, including their electro…
Spatially resolved dielectric loss at the Si/SiO interface
Megan Cowie, Taylor J. Z. Stock, Procopios C. Constantinou +2
The Si/SiO interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-base…
Are high-energy photoemission final states free-electron-like?
V. N. Strocov, L. L. Lev, F. Alarab +6
Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, inter…
Non-destructive X-ray imaging of patterned delta-layer devices in silicon
Nicolò D'Anna, Dario Ferreira Sanchez, Guy Matmon +11
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen r…
Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou +8
Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resis…