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cond-mat.mes-hall2008171 cited

Conductance of p-n-p graphene structures with 'air-bridge' top gates

R. V. Gorbachev, A. S. Mayorov, A. K. Savchenko +2

We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate…

cond-mat.mes-hall2007

Quantum interference in bilayer graphene

R. V. Gorbachev, F. V. Tikhonenko, A. S. Mayorov +2

We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak local…

cond-mat.mes-hall2007492 cited

Weak localisation in graphene flakes

F. V. Tikhonenko, D. W. Horsell, R. V. Gorbachev +1

We show that the manifestation of quantum interference in graphene is very different from that in conventional two-dimensional systems. Due to the chiral nature of charge carriers,…

cond-mat.mes-hall200754 cited

Giant Fluctuations of Coulomb Drag in a Bilayer System

A. S. Price, A. K. Savchenko, B. N. Narozhny +2

We have observed reproducible fluctuations of the Coulomb drag, both as a function of magnetic field and electron concentration, which are a manifestation of quantum interference o…

cond-mat.mes-hall2000

Metallic and insulating behaviour of the two-dimensional electron gas on a vicinal surface of Si MOSFETs

S. S. Safonov, S. H. Roshko, A. K. Savchenko +2

The resistance R of the 2DEG on the vicinal Si surface shows an unusual behaviour, which is very different from that in the (100) Si MOSFET where an unconventional metal to insulat…

cond-mat.mes-hall1998

Effect of the angular momentum on the magnitude of the current in magneto-tunnelling spectroscopy of quantum dots

B. Jouault, J. P. Holder, M. Boero +5

We present an experimental and theoretical study of electron tunnelling through quantum dots which focusses the attention on the amplitude of the current peaks as a function of mag…