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GaSbBi alloys and heterostructures: fabrication and properties
O. Delorme, L. Cerutti, R. Kudrawiec +6
Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antim…
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Jesús Herranz, Pierre Corfdir, Esperanza Luna +8
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optica…
Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots
Ryan B. Lewis, Achim Trampert, Esperanza Luna +3
We explore the Bi-surfactant-directed self-assembly and structure of InAs quantum dots grown on GaAs(110) by molecular beam epitaxy. The addition of a Bi flux during InAs depositio…
Axial GaAs/Ga(As,Bi) Nanowire Heterostructures
Miriam Oliva, Guanhui Gao, Esperanza Luna +2
Bi-containing III-V semiconductors constitute an exciting class of metastable compounds with wide-ranging potential optoelectronic and electronic applications. However, the growth…