9 citations · 10 across the 7 of their papers we have counts for
7 papers
Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides
Yi-Hsun Chen, Ping-Yuan Lo, Kyle W. Boschen +15
In this work, we report a pronounced light upconversion in few-layer transition metal dichalcogenides. Our joint theory-experiment study attributes the upconversion photoluminescen…
Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication
Kaijian Xing, Daniel McEwen, Weiyao Zhao +12
Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Ferm…
Defects, band bending and ionization rings in MoS2
Iolanda Di Bernardo, James Blyth, Liam Watson +5
Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in…
P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3
Yi-Hsun Chen, Kaijian Xing, Song Liu +10
1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technolo…
Increased Phase Coherence Length in a Porous Topological Insulator
Alex Nguyen, Golrokh Akhgar, David L. Cortie +11
The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as…
Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors
Yi-Hsun Chen, Chih-Yi Cheng, Shao-Yu Chen +9
In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Ferm…
High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes
Yu-Ting Huang, Yi-Hsun Chen, Yi-Ju Ho +10
The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a…