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20182024
most citedDefects, band bending and ionization rings in MoS2

9 citations · 10 across the 7 of their papers we have counts for

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cond-mat.mes-hall2018

High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes

Yu-Ting Huang, Yi-Hsun Chen, Yi-Ju Ho +10

The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a…