9 citations · 10 across the 7 of their papers we have counts for
3 papers · 1 filter
P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3
Yi-Hsun Chen, Kaijian Xing, Song Liu +10
1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technolo…
Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors
Yi-Hsun Chen, Chih-Yi Cheng, Shao-Yu Chen +9
In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Ferm…
High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes
Yu-Ting Huang, Yi-Hsun Chen, Yi-Ju Ho +10
The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a…