14 citations · 51 across the 9 of their papers we have counts for
9 papers
Tomography of Transport Pathways in Selective-Area-Grown Nanowires Using Angle-Resolved Conductance Fluctuations
Christian E. N. Petersen, Damon J. Carrad, Daria Beznasyuk +1
Understanding the spatial distribution of carriers is important for interpreting transport in nanoscale devices. Here, we apply conductance fluctuation tomography to planar selecti…
Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires
Giulia Meucci, Dags Olšteins, Damon J. Carrad +6
Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for…
: A Method for Extracting the Density Dependent Mobility in Two-Terminal Nanodevices
Christian E. N. Petersen, Damon J. Carrad, Thierry Désiré +6
Measuring carrier mobility as a function of the carrier density in semiconductors using Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostr…
Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad +5
New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-sca…
Cryogenic Multiplexing with Bottom-Up Nanowires
Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad +5
Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle exp…
Selective Area Growth Rates of III-V Nanowires
Martin Espiñeira Cachaza, Anna Wulff Christensen, Daria Beznasyuk +6
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, an…
Doubling the mobility of InAs/InGaAs selective area grown nanowires
Daria V. Beznasyuk, Sara Martí-Sánchez, Jung-Hyun Kang +12
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potenti…
Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure
D. V. Beznasyuk, P. Stepanov, J. L. Rouvière +4
Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties suc…
Dislocation-free axial InAs-on-GaAs nanowires on silicon
Daria V. Beznasyuk, Eric Robin, Martien Den Hertog +2
We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the…