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cond-mat.mes-hall2025
Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires
Giulia Meucci, Dags Olšteins, Damon J. Carrad +6
Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for…
cond-mat.mes-hall2025
: A Method for Extracting the Density Dependent Mobility in Two-Terminal Nanodevices
Christian E. N. Petersen, Damon J. Carrad, Thierry Désiré +6
Measuring carrier mobility as a function of the carrier density in semiconductors using Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostr…