294 citations · 1.1k across the 25 of their papers we have counts for
3 papers · 2 filters
The positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC
Meysam Mohseni, Péter Udvarhelyi, Gergő Thiering +1
Certain intrinsic point defects in silicon carbide are promising quantum systems with efficient spin-photon interface. Despite carbon vacancy in silicon carbide is an elementary an…
Optically-active spin defects in few-layer thick hexagonal boron nitride
A. Durand, T. Clua-Provost, F. Fabre +11
Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to t…
Carbon cluster emitters in silicon carbide
Pei Li, Péter Udvarhelyi, Song Li +2
Defect qubits in 4H-SiC are outstanding candidates for numerous applications in the rapidly emerging field of quantum technology. Carbon clusters can act as emission sources that m…