activity
20102023
most citedLogarithmic behavior of degradation dynamics in metal--oxide semiconductor devices

30 citations · 39 across the 5 of their papers we have counts for

collaborators

5 papers

eess.SP2023

Random Telegraph Noise based True Random Number Generator for Fully Integrated Systems

Gilson Wirth, Pedro A B Alves, Roberto da Silva

Generating streams of true random numbers is a critical component of many embedded systems. The design of fully integrated, area and power efficient True Random Number Generators i…

physics.app-ph2022

Estimating time constants of the RTS noise in semiconductor devices: a complete description of the observation window in the time domain

Roberto da Silva, Gilson Wirth

We obtained a semi-analytical treatment obtaining estimators for the sample variance and variance of sample variance for the RTS noise. Our method suggests a way to experimentally…

physics.app-ph2020

Threshold Voltage Jitter due to Random Telegraph Noise

Gilson Wirth

With the downscaling of MOSFETs to nanometer dimensions, transistor electrical parameter variability is produced by factors other than variations of physical dimensions and doping…

cond-mat.mtrl-sci2010★ 30 cited

Logarithmic behavior of degradation dynamics in metal--oxide semiconductor devices

Roberto da Silva, Gilson I. Wirth

In this paper the authors describe a theoretical simple statistical modelling of relaxation process in metal-oxide semiconductor devices that governs its degradation. Basically, st…

cond-mat.stat-mech2010★ 9 cited

A novel and precise time domain description of MOSFET low frequency noise due to random telegraph signals

Roberto da Silva, Gilson Wirth, Lucas Brusamarello

Nowadays, random telegraph signals play an important role in integrated circuit performance variability, leading for instance to failures in memory circuits. This problem is relate…