235 citations · 392 across the 16 of their papers we have counts for
16 papers
Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy
Brieg Le Corre, Clothilde Grenèche, Rozenn Bernard +16
Direct orientation contrast imaging of zinc-blende III-V materials is studied using scanning electron microscopy. A quantitative approach is taken using a 3 μm thick orientation-pa…
Time-Resolved dynamics of semiconductor nanolaser via four-wave mixing gating
Federico Monti, Guilhem Madiot, Giuseppe Modica +5
We experimentally demonstrate the direct time-domain characterization of photonic-crystal nanolasers at telecom wavelengths using a nonlinear optical gating technique based on four…
Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures
Konstantinos Pantzas, Virginie Trinité, Angel Vasanelli +5
Atomically-resolved Z-contrast and strain mappings are used to extract a model of the composition of an InGaAs/InAlAs asymmetric coupled quantum-well structure grown on InP using m…
Mid-infrared integrated resonators on a III-V platform with Q-factors beyond half a million
Luca Lucia, Gia Long Ngo, Mathilde Urbain +7
We demonstrate mid-IR integrated race-track resonators on a III-V semiconductor platform,InGaAs core epitaxially grown on InP. We have performed a complete characterization of the…
High efficiency second harmonic generation in transverse orientation patterned gallium phosphide waveguides
Antoine Lemoine, Brieg Le Corre, Lise Morice +13
Achieving high conversion efficiencies in second-order nonlinear optical processes is a key challenge in integrated photonics for both classical and quantum applications. This pape…
Mid-Infrared Frequency Combs and Pulse Generation based on Single Section Interband Cascade Lasers
Pavel Abajyan, Baptiste Chomet, Daniel A. Diaz-Thomas +10
Interband Cascade Lasers (ICLs) are semiconductor lasers emitting in the mid-wave infrared (MWIR 3-6 μm) and can operate as frequency combs (FCs). These demonstrations are based on…
Harnessing coupled nanolasers near exceptional points for directional emission
Guilhem Madiot, Quentin Chateiller, Alexandre Bazin +5
Tailoring the losses of optical systems within the frame of non-Hermitian physics has appeared very fruitful in the last few years. In particular, the description of exceptional po…
Merging and disconnecting resonance tongues in a pulsing excitable microlaser with delayed optical feedback
Soizic Terrien, Bernd Krauskopf, Neil G. R. Broderick +6
Excitability, encountered in numerous fields from biology to neurosciences and optics, is a general phenomenon characterized by an all-or-none response of a system to an external p…
Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths
Konstantinos Pantzas, Sylvain Combrié, Myriam Bailly +11
A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical se…
10 Gbit/s free space data transmission at 9 m wavelength with unipolar quantum optoelectronics
Hamza Dely, Thomas Bonazzi, Olivier Spitz +12
The realization of high-frequency unipolar quantum optoelectronic devices enables the demonstration of high bitrate free space data transmission in the second atmospheric window. D…
Ultra-low-noise Microwave to Optics Conversion in Gallium Phosphide
Robert Stockill, Moritz Forsch, Frederick Hijazi +5
Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the opti…
Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates
Konstantinos Pantzas, Grégoire Beaudoin, Myriam Bailly +7
The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the templat…
Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Anas Elbaz, Riazul Arefin, Emilie Sakat +20
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible app…
Experimental quantification of atomically-resolved HAADF-STEMimages using EDX
Konstantinos Pantzas, Gilles Patriarche
Atomically-resolved mappings of the indium composition in InGaN/GaN multi-quantum wellstructures have been obtained by quantifying the contrast in HAADF-STEM. The quantificationpro…
Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
A. Elbaz, D. Buca, N. Von den Driesch +15
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, s…
Gallium phosphide as a piezoelectric platform for quantum optomechanics
Robert Stockill, Moritz Forsch, Grégoire Beaudoin +4
Recent years have seen extraordinary progress in creating quantum states of mechanical oscillators, leading to great interest in potential applications for such systems in both fun…