65 citations · 73 across the 8 of their papers we have counts for
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Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy
Brieg Le Corre, Clothilde Grenèche, Rozenn Bernard +16
Direct orientation contrast imaging of zinc-blende III-V materials is studied using scanning electron microscopy. A quantitative approach is taken using a 3 μm thick orientation-pa…
Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures
Konstantinos Pantzas, Virginie Trinité, Angel Vasanelli +5
Atomically-resolved Z-contrast and strain mappings are used to extract a model of the composition of an InGaAs/InAlAs asymmetric coupled quantum-well structure grown on InP using m…
Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates
Konstantinos Pantzas, Grégoire Beaudoin, Myriam Bailly +7
The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the templat…
Experimental quantification of atomically-resolved HAADF-STEMimages using EDX
Konstantinos Pantzas, Gilles Patriarche
Atomically-resolved mappings of the indium composition in InGaN/GaN multi-quantum wellstructures have been obtained by quantifying the contrast in HAADF-STEM. The quantificationpro…