235 citations · 392 across the 16 of their papers we have counts for
3 papers · 1 filter
Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Anas Elbaz, Riazul Arefin, Emilie Sakat +20
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible app…
Experimental quantification of atomically-resolved HAADF-STEMimages using EDX
Konstantinos Pantzas, Gilles Patriarche
Atomically-resolved mappings of the indium composition in InGaN/GaN multi-quantum wellstructures have been obtained by quantifying the contrast in HAADF-STEM. The quantificationpro…
Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
A. Elbaz, D. Buca, N. Von den Driesch +15
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, s…