146 citations · 839 across the 15 of their papers we have counts for
6 papers · 1 filter
Kapitza-resistance-like exciton dynamics in atomically flat MoSe-WSe lateral heterojunction
Hassan Lamsaadi, Dorian Beret, Ioannis Paradisanos +13
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Tran…
Interface engineering of charge-transfer excitons in 2D lateral heterostructures
Roberto Rosati, Ioannis Paradisanos, Libai Huang +9
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer ex…
Tuning exciton recombination rates in doped transition metaldichalcogenides
Theresa Kuechle, Sebastian Klimmer, Margarita Lapteva +7
Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding th…
Giant persistent photoconductivity in monolayer MoS2 field-effect transistors
A. George, M. V. Fistul, M. Gruenewald +12
Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD based devices to light generates p…
Accessing high optical quality of MoS2 monolayers grown by chemical vapor deposition
Shivangi Shree, Antony George, Tibor Lehnert +9
Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural…
Lateral heterostructures of two-dimensional materials by electron-beam induced stitching
Andreas Winter, Antony George, Christof Neumann +9
We present a novel methodology to synthesize two-dimensional (2D) lateral heterostructures of graphene and MoS2 sheets with molecular carbon nanomembranes (CNMs), which is based on…