activity
20162026
most citedJosephson Diode Effect in High Mobility InSb Nanoflags

128 citations · 636 across the 36 of their papers we have counts for

collaborators
Showing 2019Show all

8 papers · 1 filter

cond-mat.mes-hall2019★ 29 cited

A Double Quantum Dot Spin Valve

Arunav Bordoloi, Valentina Zannier, Lucia Sorba +2

A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Her…

cond-mat.mes-hall2019★ 19 cited

Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots

Zahra Sadre Momtaz, Stefano Servino, Valeria Demontis +7

We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated th…

cond-mat.mes-hall2019★ 15 cited

Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires

Shiyao Wu, Kai Peng, Sergio Battiato +17

Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling…

cond-mat.mes-hall2019★ 3 cited

Investigation of InAs based devices for topological applications

Matteo Carrega, Stefano Guiducci, Andrea Iorio +10

Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materia…

cond-mat.mes-hall2019★ 18 cited

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Frederick S. Thomas, Andreas Baumgartner, Lukas Gubser +7

We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (…

cond-mat.mes-hall2019

Proximitized Josephson junctions in highly-doped InAs nanowires robust to optical illumination

Lily Yang, Stephan Steinhauer, Elia Strambini +7

We have studied the effects of optical-frequency light on proximitized InAs/Al Josephson junctions based on highly n-doped InAs nanowires at varying incident photon flux and at thr…

cond-mat.mes-hall2019★ 10 cited

Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots

Samuele Cornia, Francesco Rossella, Valeria Demontis +5

With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external sti…

cond-mat.mes-hall2019★ 80 cited

Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots

Domenic Prete, Paolo Andrea Erdman, Valeria Demontis +7

We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G…