128 citations · 636 across the 36 of their papers we have counts for
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High Mobility Free-Standing InSb Nanoflags Grown On InP Nanowire Stems For Quantum Devices
Isha Verma, Sedighe Salimian, Valentina Zannier +5
High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A wa…
Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions
Sedighe Salimian, Matteo Carrega, Isha Verma +5
High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in…
Quantum-dot single-electron transistor as thermoelectric quantum detectors at terahertz frequencies
Mahdi Asgari, Dominique Coquillat, Guido Menichetti +6
Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor th…
Spectroscopy of the local density-of-states in nanowires using integrated quantum dots
Frederick S. Thomas, Malin Nilsson, Carlo Ciaccia +6
In quantum dot (QD) electron transport experiments additional features can appear in the differential conductance that do not originate from discrete states in the QD, but…
Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires
Omer Arif, Valentina Zannier, Ang Li +4
The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, w…