8 papers
A Light-Hole Quantum Well on Silicon
Simone Assali, Anis Attiaoui, Patrick Del Vecchio +3
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to th…
High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response
M. R. M. Atalla, S. Assali, S. Koelling +2
The availability of high-frequency pulsed emitters in the m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fibe…
Combined Iodine- and Sulfur-based Treatments for an Effective Passivation of GeSn Surface
Léonor Groell, Anis Attiaoui, Simone Assali +1
GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploit…
All-Group IV membrane room-temperature mid-infrared photodetector
Mahmoud R. M. Atalla, Simone Assali, Anis Attiaoui +4
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In th…
Extended Short-Wave Infrared Absorption in Group IV Nanowire Arrays
A. Attiaoui, É. Bouthillier, G. Daligou +3
Engineering light absorption in the extended short-wave infrared (e-SWIR) range using scalable materials is a long-sought-after capability that is crucial to implement cost-effecti…
Mid-infrared emission and absorption in strained and relaxed direct bandgap GeSn semiconductors
Simone Assali, Alain Dijkstra, Anis Attiaoui +3
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. W…