82 citations · 274 across the 19 of their papers we have counts for
21 papers
Enhanced thermal stability of SiGeSn by suppressing surface-mediated degradation
Anis Attiaoui, Sebastian Koelling, Sebastien Koelling +3
alloys are promising silicon-compatible semiconductors for monolithic infrared photonics. However, their metastable nature limits the thermal budgets available for…
Shining light on short-range atomic ordering in semiconductors alloys
Anis Attiaoui, Shunda Chen, Joseph C. Woicik +7
The functional properties of semiconductors are typically controlled by tailoring their chemical composition and their state of strain, and by controlling their long-range structur…
Continuous-wave GeSn light emitting diodes on silicon with m room-temperature emission
Mahmoud R. M. Atalla, Simone Assali, Gérard Daligou +4
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applica…
Nuclear Spin-Depleted, Isotopically Enriched 70Ge/28Si70Ge Quantum Wells
O. Moutanabbir, S. Assali, A. Attiaoui +6
The p-symmetry of the hole wavefunction is associated with a weaker hyperfine interaction as compared to electrons, thus making hole spin qubits attractive candidates to implement…
Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon
Gérard Daligou, Richard Soref, Anis Attiaoui +4
Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming.…
Radiative Carrier Lifetime in GeSn Mid-Infrared Emitters
Gérard Daligou, Anis Attiaoui, Simone Assali +2
GeSn semiconductors hold the premise for large-scale, monolithic mid-infrared photonics and optoelectronics. However, despite the successful demonstration of several Ge…
Polarization-Tuned Fano Resonances in All-Dielectric Short-Wave Infrared Metasurface
Anis Attiaoui, Gérard Daligou, Simone Assali +3
The short-wave infrared (SWIR) is an underexploited portion of the electromagnetic spectrum in metasurface-based nanophotonics despite its strategic importance in sensing and imagi…
500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon
Simone Assali, Sebastian Koelling, Zeinab Abboud +3
Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum cover…
Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures
Anis Attiaoui, Gabriel Fettu, Samik Mukherjee +2
A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carri…
Dark current in monolithic extended-SWIR GeSn PIN photodetectors
Mahmoud R. M. Atalla, Simone Assali, Sebastian Koelling +2
The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and i…
A Light-Hole Quantum Well on Silicon
Simone Assali, Anis Attiaoui, Patrick Del Vecchio +3
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to th…
High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response
M. R. M. Atalla, S. Assali, S. Koelling +2
The availability of high-frequency pulsed emitters in the m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fibe…
Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires
Lu Luo, Simone Assali, Mahmoud R. M. Atalla +6
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we e…
Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics
Simone Assali, Anis Attiaoui, Sebastian Koelling +6
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the stru…
Combined Iodine- and Sulfur-based Treatments for an Effective Passivation of GeSn Surface
Léonor Groell, Anis Attiaoui, Simone Assali +1
GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploit…
All-Group IV membrane room-temperature mid-infrared photodetector
Mahmoud R. M. Atalla, Simone Assali, Anis Attiaoui +4
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In th…
Extended Short-Wave Infrared Absorption in Group IV Nanowire Arrays
A. Attiaoui, É. Bouthillier, G. Daligou +3
Engineering light absorption in the extended short-wave infrared (e-SWIR) range using scalable materials is a long-sought-after capability that is crucial to implement cost-effecti…
Mid-infrared emission and absorption in strained and relaxed direct bandgap GeSn semiconductors
Simone Assali, Alain Dijkstra, Anis Attiaoui +3
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. W…
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
T. Grange, S. Mukherjee, G. Capellini +8
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploi…
3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices
Samik Mukherjee, Anis Attiaoui, Matthias Bauer +1
The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the 3-D…
Enhanced IR Light Absorption in Group IV-SiGeSn Core-Shell Nanowires
Anis Attiaoui, Stephan Wirth, André-Pierre Blanchard-Dionne +4
Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engi…