82 citations · 274 across the 19 of their papers we have counts for
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Enhanced thermal stability of SiGeSn by suppressing surface-mediated degradation
Anis Attiaoui, Sebastian Koelling, Sebastien Koelling +3
alloys are promising silicon-compatible semiconductors for monolithic infrared photonics. However, their metastable nature limits the thermal budgets available for…
Shining light on short-range atomic ordering in semiconductors alloys
Anis Attiaoui, Shunda Chen, Joseph C. Woicik +7
The functional properties of semiconductors are typically controlled by tailoring their chemical composition and their state of strain, and by controlling their long-range structur…
500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon
Simone Assali, Sebastian Koelling, Zeinab Abboud +3
Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum cover…
Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures
Anis Attiaoui, Gabriel Fettu, Samik Mukherjee +2
A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carri…
Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics
Simone Assali, Anis Attiaoui, Sebastian Koelling +6
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the stru…
Combined Iodine- and Sulfur-based Treatments for an Effective Passivation of GeSn Surface
Léonor Groell, Anis Attiaoui, Simone Assali +1
GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploit…
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
T. Grange, S. Mukherjee, G. Capellini +8
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploi…
3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices
Samik Mukherjee, Anis Attiaoui, Matthias Bauer +1
The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the 3-D…
Enhanced IR Light Absorption in Group IV-SiGeSn Core-Shell Nanowires
Anis Attiaoui, Stephan Wirth, André-Pierre Blanchard-Dionne +4
Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engi…