activity
20152023
most citedA universal description of III-V/Si epitaxial growth processes

60 citations · 117 across the 6 of their papers we have counts for

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Showing 2020Show all

2 papers · 1 filter

physics.app-ph2020

Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells

Lipin Chen, Mahdi Alqahtani, Christophe Levallois +12

Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. T…

cond-mat.mtrl-sci2020★ 39 cited

Zinc-Blende group III-V/group IV epitaxy: importance of the miscut

C. Cornet, S. Charbonnier, I. Lucci +15

Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with t…