4 citations · 9 across the 6 of their papers we have counts for
7 papers
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert +7
We critically review recent experimental and theoretical advances on the valence- and structure-mismatched heteroepitaxy of III-V semiconductors on group-IV substrates. We examine…
The impact of interfacial chemistry on the band offset of GaAs/GaO heterostructures
Sofia Apergi, Alfredo Pasquarello, Charles Cornet +1
GaO/GaAs heterojunctions are emerging as promising candidates for next-generation power electronics, photonics, and energy devices, leveraging the high breakdown voltage an…
Full ab initio atomistic approach for morphology prediction of hetero-integrated crystals: A confrontation with experiments
Sreejith Pallikkara Chandrasekharan, Sofia Apergi, Chen Wei +6
Here, we propose a comprehensive first-principle atomistic approach to predict the Wulff-Kaischew equilibrium shape of crystals heterogeneously integrated on a dissimilar material.…
Efficient absolute interface energy calculations for heterostructures: Synergy between localized basis sets and surface passivation techniques
Sreejith Pallikkara Chandrasekharan, Sofia Apergi, Charles Cornet +1
Heterostructures combining diverse physico-chemical properties are increasingly in demand for a wide range of applications in modern science and technology. However, despite their…
Computational assessment of non-polar and polar GaP terminations for photoelectrochemical water splitting
Sofia Apergi, Sreejith Pallikkara Chandrasekharan, Charles Cornet +1
With photoelectrochemical water splitting being one of the most promising approaches for clean energy production and storage, the search for efficient photoelectrode materials is g…
Stability of monodomain III-V crystals and antiphase boundaries over a Si monoatomic step
D. Gupta, S. Pallikkara Chandrasekharan, S. Thébaud +2
Here, we compare the stabilities of different III-V crystals configurations on stepped Si substrates, with or without anti-phase boundaries, for abrupt and compensated interfaces,…
Inevitable Si surface passivation prior to III-V/Si epitaxy: A strong impact on wetting properties
S. Pallikkara Chandrasekharan, D. Gupta, C. Cornet +1
Here, we quantitatively estimate the impact of the inevitable Si surface passivation prior to III-V/Si hetero-epitaxy on the surface energy of the Si initial substrate, and explore…