activity
20182020
most citedAbrupt changes in the graphene on Ge(001) system at the onset of surface melting

13 citations · 15 across the 2 of their papers we have counts for

collaborators

10 papers

cond-mat.mtrl-sci2020

Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction

Miriam Galbiati, Luca Persichetti, Paola Gori +8

Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the str…

cond-mat.mes-hall2020

Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells

Luca Persichetti, Michele Montanari, Chiara Ciano +9

: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based TH…

cond-mat.mtrl-sci2020

Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering

T. Grange, S. Mukherjee, G. Capellini +8

We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploi…

cond-mat.mes-hall2019

Single-atom electron paramagnetic resonance in a scanning tunneling microscope driven by a radiofrequency antenna at 4 K

T. S. Seifert, S. Kovarik, C. Nistor +3

Combining electron paramagnetic resonance (EPR) with scanning tunneling microscopy (STM) enables detailed insight into the interactions and magnetic properties of single atoms on s…

cond-mat.mes-hall2019

Driving with temperature the synthesis of graphene films on Ge(110)

L. Persichetti, M. De Seta, A. M. Scaparro +8

We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spec…

cond-mat.mes-hall20192 cited

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

L. Persichetti, M. Fanfoni, B. Bonanni +5

Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(0…