58 citations · 297 across the 14 of their papers we have counts for
14 papers
Electronic structure of the Ge/Si(105) hetero-interface
Polina M. Sheverdyaeva, Conor Hogan, Anna Sgarlata +5
Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/…
Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing
L. Camilli, M. Galbiati, L. Di Gaspare +9
Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal ann…
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
David Stark, Muhammad Mirza, Luca Persichetti +15
We report electroluminescence originating from L-valley transitions in n-type Ge/SiGe quantum cascade structures centered at 3.4 and 4.9 THz with a line broadenin…
Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction
Miriam Galbiati, Luca Persichetti, Paola Gori +8
Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the str…
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
Luca Persichetti, Michele Montanari, Chiara Ciano +9
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based TH…
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
T. Grange, S. Mukherjee, G. Capellini +8
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploi…