activity
20102026
most citedHigher-Order Topology in Bismuth

843 citations · 1.8k across the 29 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

15 papers · 1 filter

cond-mat.mes-hall2026

Observation of Intrinsic Anderson Localization in Few-Layer ReS

Shreya Paul, Pritam Das, Devarshi Chakrabarty +2

Electron localization phenomena are expected to play an important role in the transport properties of two-dimensional materials. Rhenium disulfide (ReS), with its narrow conduc…

cond-mat.mes-hall2026

Percolative Instabilities and Sparse-Limit Fractality in 1T-TaS

Poulomi Maji, Md Aquib Molla, Koushik Dey +13

The low-temperature metallic phase of 1T-TaS2 may originate from current- and voltage-driven destabilization of the commensurate charge density wave (CDW) in a strongly correlated…

cond-mat.mes-hall2019★ 10 cited

Long- to short-junction crossover and field-reentrant critical current in Al/Ag-nanowires/Al Josephson junctions

A. Murani, S. Sengupta, A. Kasumov +5

We have probed the superconducting proximity effect through long high-quality monocrystalline Ag nanowires, by realizing Josephson junctions of different lengths, with different su…

cond-mat.mes-hall2016★ 132 cited

Ballistic edge states in Bismuth nanowires revealed by SQUID interferometry

Anil Murani, Alik Kasumov, Shamashis Sengupta +9

Spin-orbit interactions are known to have drastic effects on the band structure of heavy-element-based materials. Celebrated examples are the recently identified 3D and 2D topologi…

cond-mat.mes-hall2016★ 17 cited

Wide bandwidth nanowire electromechanics on insulating substrates at room temperature

T. S. Abhilash, John P Mathew, Shamashis Sengupta +3

We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate is that it results i…

cond-mat.mes-hall2014★ 38 cited

Superconducting nanowires by electron-beam-induced deposition

Shamashis Sengupta, Chuan Li, Cedric Baumier +4

Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often resul…

cond-mat.mes-hall2014★ 1 cited

Magnetic field resistant quantum interferences in bismuth nanowires based Josephson junctions

Chuan Li, A. Kasumov, A. Murani +11

We investigate proximity induced superconductivity in micrometer-long bismuth nanowires con- nected to superconducting electrodes with a high critical field. At low temperature we…

cond-mat.mes-hall2012★ 6 cited

Plasmon mode modifies the elastic response of a nanoscale charge density wave system

Shamashis Sengupta, Niveditha Samudrala, Vibhor Singh +4

The elastic response of suspended NbSe3 nanowires is studied across the charge density wave phase transition. The nanoscale dimensions of the resonator lead to a large resonant fre…

cond-mat.mes-hall2012★ 32 cited

Coupling between quantum Hall state and electromechanics in suspended graphene resonator

Vibhor Singh, Bushra Irfan, Ganesh Subramanian +6

Using graphene resonator, we perform electromechanical measurements in quantum Hall regime to probe the coupling between a quantum Hall (QH) system and its mechanical motion. Mecha…

cond-mat.mes-hall2011★ 9 cited

High Q electromechanics with InAs nanowire quantum dots

Hari S. Solanki, Shamashis Sengupta, Sudipta Dubey +7

In this report, we study electromechanical properties of a suspended InAs nanowire (NW) resonator. At low temperatures, the NW acts as the island of a single electron transistor (S…

cond-mat.mes-hall2011★ 35 cited

Tunable thermal conductivity in defect engineered nanowires at low temperatures

Sajal Dhara, Hari S. Solanki, Arvind Pawan R. +7

We measure the thermal conductivity () of individual InAs nanowires (NWs), and find that it is 3 orders of magnitude smaller than the bulk value in the temperature range of 10 t…

cond-mat.mes-hall2011★ 20 cited

Facile fabrication of lateral nanowire wrap-gate devices with improved performance

Sajal Dhara, Shamashis Sengupta, Hari S. Solanki +5

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a…

cond-mat.mes-hall2010★ 43 cited

Nanoscale electromechanical resonators as probes of the charge density wave transition in NbSe

Shamashis Sengupta, Hari S. Solanki, Vibhor Singh +2

We study nanoelectromechanical resonators fabricated from suspended flakes of NbSe (thickness30-50 nm) to probe charge density wave (CDW) physics at nanoscale. Variation…

cond-mat.mes-hall2010★ 242 cited

Probing thermal expansion of graphene and modal dispersion at low-temperature using graphene NEMS resonators

Vibhor Singh, Shamashis Sengupta, Hari S. Solanki +5

We use suspended graphene electromechanical resonators to study the variation of resonant frequency as a function of temperature. Measuring the change in frequency resulting from a…

cond-mat.mes-hall2010★ 43 cited

Tuning mechanical modes and influence of charge screening in nanowire resonators

Hari S. Solanki, Shamashis Sengupta, Sajal Dhara +6

We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FE…