U. Singisetti

activity

20182022

β

-Ga

_{2}

_{3}

Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm

^{2}

68 citations · 69 across the 3 of their papers we have counts for

collaborators

Showing cond-mat.mtrl-sciShow all

2 papers · 1 filter

cond-mat.mtrl-sci2022★ 1 cited

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3

This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-20…

cond-mat.mtrl-sci2020

Temperature Dependent Current Dispersion Study in $β$ -Ga $_{2}$ O $_{3}$ FETs Using Sub-Microsecond Pulsed IV Characteristics

Abhishek Vaidya, Uttam Singisetti

A comprehensive study of drain current dispersion effects in $β$ -Ga $_{2}$ O $_{3}$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain acc…

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

Temperature Dependent Current Dispersion Study in β-Ga2​O3​ FETs Using Sub-Microsecond Pulsed IV Characteristics

Temperature Dependent Current Dispersion Study in $β$ -Ga $_{2}$ O $_{3}$ FETs Using Sub-Microsecond Pulsed IV Characteristics