68 citations · 68 across the 2 of their papers we have counts for
4 papers · 1 filter
4.4 kV -GaO Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm
Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7
Field-plated (FP) depletion-mode MOVPE-grown -GaO lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN dielectric…
Low field electron mobility in : An ab-initio approach
Ankit Sharma, Uttam Singisetti
The phase of is an ultra-wideband semiconductor with potential power electronics applications. In this work, we calculate the low field electron mobility in $α-Ga…
Low field transport calculations in 2-dimensional electron gas in $\mathrm{β\mbox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructures
Avinash Kumar, Uttam Singisetti
-Gallium oxide ($\mathrm{β\mbox{-}Ga_{2}O_{3}}$) is an emerging widebandgap semiconductor for potential application in power and RF electronics applications. Initial theo…
Pt, Ni and Ti Schottky barrier contacts to \{beta}-(Al0.19Ga0.81)2O3 grown by Molecular Beam Epitaxy on Sn doped \{beta}-Ga2O3 substrate
Abhishek Vaidya, K. Sasaki, A. Kuramata +2
A comprehensive current-voltage (I-V) characterization is performed for three different Schottky contacts; Pt, Ni and Ti, to unintentionally doped (UID) \{beta}-(Al0.19Ga0.81)2O3 g…