27 citations · 54 across the 4 of their papers we have counts for
Showing physics.app-phShow all
2 papers · 1 filter
physics.app-ph2020★ 23 cited
Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions
Shoichi Sato, Masaaki Tanaka, Ryosho Nakane
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-g…
physics.app-ph2017★ 27 cited
Spin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer
Shoichi Sato, Ryosho Nakane, Takato Hada +1
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical t…