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20112020
most citedSpin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

27 citations · 54 across the 4 of their papers we have counts for

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cond-mat.mtrl-sci2016★ 4 cited

Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe

Yuki K. Wakabayashi, Kohei Okamoto, Yoshisuke Ban +3

Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. Recent first principles…

cond-mat.mtrl-sci2011

Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes

Ryosho Nakane, Shoichi Sato, Shun Kokutani +1

We have investigated the influence of anisotropic magnetoresistance (AMR) on nonlocal signals in Si-based multi-terminal devices with ferromagnetic Fe electrodes. The AMR of the Fe…