27 citations · 54 across the 4 of their papers we have counts for
4 papers
Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions
Shoichi Sato, Masaaki Tanaka, Ryosho Nakane
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-g…
Spin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer
Shoichi Sato, Ryosho Nakane, Takato Hada +1
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical t…
Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe
Yuki K. Wakabayashi, Kohei Okamoto, Yoshisuke Ban +3
Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. Recent first principles…
Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes
Ryosho Nakane, Shoichi Sato, Shun Kokutani +1
We have investigated the influence of anisotropic magnetoresistance (AMR) on nonlocal signals in Si-based multi-terminal devices with ferromagnetic Fe electrodes. The AMR of the Fe…