182 citations · 937 across the 23 of their papers we have counts for
16 papers · 1 filter
A Compensated Design of the LGAD Gain Layer
Valentina Sola, Roberta Arcidiacono, Patrick Asenov +21
In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p implant responsible for the local and controlled signal multiplic…
Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer
S. M. Mazza, C. Gee, Y. Zhao +24
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutro…
Inter-pad dead regions of irradiated FBK Low Gain Avalanche Detectors
B. Darby, S. M. Mazza, F. McKinney-Martinez +22
Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and…
Test beam characterization of sensor prototypes for the CMS Barrel MIP Timing Detector
R. Abbott, A. Abreu, F. Addesa +196
The MIP Timing Detector will provide additional timing capabilities for detection of minimum ionizing particles (MIPs) at CMS during the High Luminosity LHC era, improving event re…
First application of machine learning algorithms to the position reconstruction in Resistive Silicon Detectors
Federico Siviero, Roberta Arcidiacono, Nicolò Cartiglia +6
RSDs (Resistive AC-Coupled Silicon Detectors) are n-in-p silicon sensors based on the LGAD (Low-Gain Avalanche Diode) technology, featuring a continuous gain layer over the whole s…
Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data
M. Tornago, R. Arcidiacono, N. Cartiglia +18
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis…
Potential for Improved Time Resolution Using Very Thin Ultra-Fast Silicon Detectors (UFSDs)
A. Seiden, H. Ren, Y. Jin +14
Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity…
Effect of deep gain layer and Carbon infusion on LGAD radiation hardness
R Padilla, C. Labitan, Z. Galloway +22
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after ir…
Silicon Sensors for Future Particle Trackers
N. Cartiglia, R. Arcidiacono, G. Borghi +17
Several future high-energy physics facilities are currently being planned. The proposed projects include high energy circular and linear colliders, hadron colliders and m…
Study of the effects of radiation on the CMS Drift Tubes Muon Detector for the HL-LHC
G. Abbiendi, J. Alcaraz Maestre, A. Álvarez Fernández +140
The CMS drift tubes (DT) muon detector, built for withstanding the LHC expected integrated and instantaneous luminosities, will be used also in the High Luminosity LHC (HL-LHC) at…
Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2
S. M. Mazza, E. Estrada, Z. Galloway +24
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation…
First FBK Production of 50m Ultra-Fast Silicon Detectors
V. Sola, R. Arcidiacono, M. Boscardin +8
Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diod…
Radiation resistant LGAD design
M. Ferrero, R. Arcidiacono, M. Barozzi +16
In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different doping combinations…
Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2
Z. Galloway, V. Fadeyev, P. Freeman +27
In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used…
Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
N. Cartiglia, A. Staiano, V. Sola +40
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 Ge…
The design and performance of the ZEUS Micro Vertex detector
A. Polini, I. Brock, S. Goers +79
In order to extend the tracking acceptance, to improve the primary and secondary vertex reconstruction and thus enhancing the tagging capabilities for short lived particles, the ZE…