activity
20192022
most citedPhase Field Modeling of Domain Dynamics and Polarization Accumulation in Ferroelectric HZO

100 citations · 140 across the 5 of their papers we have counts for

collaborators

7 papers

physics.app-ph20221 cited

CMOS-Compatible Ising Machines built using Bistable Latches Coupled through Ferroelectric Transistor Arrays

Antik Mallick, Zijian Zhao, Mohammad Khairul Bashar +8

Realizing compact and scalable Ising machines that are compatible with CMOS-process technology is crucial to the effectiveness and practicality of using such hardware platforms for…

cs.ET20222 cited

An Ultra-Compact Single FeFET Binary and Multi-Bit Associative Search Engine

Xunzhao Yin, Franz Müller, Qingrong Huang +12

Content addressable memory (CAM) is widely used in associative search tasks for its highly parallel pattern matching capability. To accommodate the increasingly complex and data-in…

cs.ET202111 cited

Deep Random Forest with Ferroelectric Analog Content Addressable Memory

Xunzhao Yin, Franz Müller, Ann Franchesca Laguna +14

Deep random forest (DRF), which incorporates the core features of deep learning and random forest (RF), exhibits comparable classification accuracy, interpretability, and low memor…

cs.ET202126 cited

Intrinsic synaptic plasticity of ferroelectric field effect transistors for online learning

Arnob Saha, A N M Nafiul Islam, Zijian Zhao +3

Nanoelectronic devices emulating neuro-synaptic functionalities through their intrinsic physics at low operating energies is imperative toward the realization of brain-like neuromo…

cs.ET2020

FeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric

Xunzhao Yin, Chao Li, Qingrong Huang +5

Ferroelectric field effect transistors (FeFETs) are being actively investigated with the potential for in-memory computing (IMC) over other non-volatile memories (NVMs). Content Ad…

cs.ET2020

A Hybrid FeMFET-CMOS Analog Synapse Circuit for Neural Network Training and Inference

Arman Kazemi, Ramin Rajaei, Kai Ni +3

An analog synapse circuit based on ferroelectric-metal field-effect transistors is proposed, that offers 6-bit weight precision. The circuit is comprised of volatile least signific…