activity
20192023
most citedFeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric

133 citations · 454 across the 19 of their papers we have counts for

collaborators

19 papers

cs.ET2023★ 44 cited

A Ferroelectric Compute-in-Memory Annealer for Combinatorial Optimization Problems

Xunzhao Yin, Yu Qian, Alptekin Vardar +11

Computationally hard combinatorial optimization problems (COPs) are ubiquitous in many applications, including logistical planning, resource allocation, chip design, drug explorati…

cs.ET2023

Embedding Security into Ferroelectric FET Array via In-Situ Memory Operation

Yixin Xu, Yi Xiao, Zijian Zhao +7

Non-volatile memories (NVMs) have the potential to reshape next-generation memory systems because of their promising properties of near-zero leakage power consumption, high density…

cs.ET2023

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

Zijian Zhao, Shan Deng, Swetaki Chatterjee +15

Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers fr…

cs.ET2022★ 1 cited

Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors

Hongtao Zhong, Zijie Zheng, Leming Jiao +8

Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role…

cs.AR2022★ 1 cited

Ferroelectric FET based Context-Switching FPGA Enabling Dynamic Reconfiguration for Adaptive Deep Learning Machines

Yixin Xu, Zijian Zhao, Yi Xiao +16

Field Programmable Gate Array (FPGA) is widely used in acceleration of deep learning applications because of its reconfigurability, flexibility, and fast time-to-market. However, c…

cs.ET2022★ 5 cited

A Homogeneous Processing Fabric for Matrix-Vector Multiplication and Associative Search Using Ferroelectric Time-Domain Compute-in-Memory

Xunzhao Yin, Qingrong Huang, Franz Müller +8

In this work, we propose a ferroelectric FET(FeFET) time-domain compute-in-memory (TD-CiM) array as a homogeneous processing fabric for binary multiplication-accumulation (MAC) and…

cs.ET2022

Hybrid Stochastic Synapses Enabled by Scaled Ferroelectric Field-effect Transistors

A N M Nafiul Islam, Arnob Saha, Zhouhang Jiang +2

Achieving brain-like density and performance in neuromorphic computers necessitates scaling down the size of nanodevices emulating neuro-synaptic functionalities. However, scaling…

cs.ET2022★ 1 cited

Ferroelectric FET-based strong physical unclonable function: a low-power, high-reliable and reconfigurable solution for Internet-of-Things security

Xinrui Guo, Xiaoyang Ma, Franz Muller +5

Hardware security has been a key concern in modern information technologies. Especially, as the number of Internet-of-Things (IoT) devices grows rapidly, to protect the device secu…

cs.AR2022★ 4 cited

COSIME: FeFET based Associative Memory for In-Memory Cosine Similarity Search

Che-Kai Liu, Haobang Chen, Mohsen Imani +8

In a number of machine learning models, an input query is searched across the trained class vectors to find the closest feature class vector in cosine similarity metric. However, p…

physics.app-ph2022★ 1 cited

CMOS-Compatible Ising Machines built using Bistable Latches Coupled through Ferroelectric Transistor Arrays

Antik Mallick, Zijian Zhao, Mohammad Khairul Bashar +8

Realizing compact and scalable Ising machines that are compatible with CMOS-process technology is crucial to the effectiveness and practicality of using such hardware platforms for…

cs.ET2022★ 2 cited

An Ultra-Compact Single FeFET Binary and Multi-Bit Associative Search Engine

Xunzhao Yin, Franz Müller, Qingrong Huang +12

Content addressable memory (CAM) is widely used in associative search tasks for its highly parallel pattern matching capability. To accommodate the increasingly complex and data-in…

cond-mat.mes-hall2021★ 18 cited

Computational Associative Memory with Amorphous InGaZnO Channel 3D NAND-Compatible FG Transistors

Chen Sun, Chao Li, Subhranu Samanta +11

3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instabili…

cs.ET2021★ 11 cited

Deep Random Forest with Ferroelectric Analog Content Addressable Memory

Xunzhao Yin, Franz Müller, Ann Franchesca Laguna +14

Deep random forest (DRF), which incorporates the core features of deep learning and random forest (RF), exhibits comparable classification accuracy, interpretability, and low memor…

cs.ET2021★ 15 cited

Hardware Functional Obfuscation With Ferroelectric Active Interconnects

Tonggunag Yu, Yixin Xu, Shan Deng +8

Camouflaging gate techniques are typically used in hardware security to prevent reverse engineering. Layout level camouflaging by adding dummy contacts ensures some level of protec…

cs.ET2021★ 26 cited

Intrinsic synaptic plasticity of ferroelectric field effect transistors for online learning

Arnob Saha, A N M Nafiul Islam, Zijian Zhao +3

Nanoelectronic devices emulating neuro-synaptic functionalities through their intrinsic physics at low operating energies is imperative toward the realization of brain-like neuromo…

cond-mat.mes-hall2021★ 92 cited

Logic Compatible High-Performance Ferroelectric Transistor Memory

Sourav Dutta, Huacheng Ye, Abhishek Khanna +11

Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limi…

cs.ET2020★ 133 cited

FeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric

Xunzhao Yin, Chao Li, Qingrong Huang +5

Ferroelectric field effect transistors (FeFETs) are being actively investigated with the potential for in-memory computing (IMC) over other non-volatile memories (NVMs). Content Ad…

cs.ET2020

A Hybrid FeMFET-CMOS Analog Synapse Circuit for Neural Network Training and Inference

Arman Kazemi, Ramin Rajaei, Kai Ni +3

An analog synapse circuit based on ferroelectric-metal field-effect transistors is proposed, that offers 6-bit weight precision. The circuit is comprised of volatile least signific…

physics.app-ph2019★ 100 cited

Phase Field Modeling of Domain Dynamics and Polarization Accumulation in Ferroelectric HZO

Atanu K Saha, Kai Ni, Sourav Dutta +2

In this work, we investigate the accumulative polarization (P) switching characteristics of ferroelectric (FE) thin films under the influence of sequential electric-field pulses. B…