133 citations · 454 across the 19 of their papers we have counts for
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cond-mat.mes-hall2021★ 18 cited
Computational Associative Memory with Amorphous InGaZnO Channel 3D NAND-Compatible FG Transistors
Chen Sun, Chao Li, Subhranu Samanta +11
3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instabili…
cond-mat.mes-hall2021★ 92 cited
Logic Compatible High-Performance Ferroelectric Transistor Memory
Sourav Dutta, Huacheng Ye, Abhishek Khanna +11
Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limi…