133 citations · 454 across the 19 of their papers we have counts for
5 papers · 1 filter
Computational Associative Memory with Amorphous InGaZnO Channel 3D NAND-Compatible FG Transistors
Chen Sun, Chao Li, Subhranu Samanta +11
3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instabili…
Deep Random Forest with Ferroelectric Analog Content Addressable Memory
Xunzhao Yin, Franz Müller, Ann Franchesca Laguna +14
Deep random forest (DRF), which incorporates the core features of deep learning and random forest (RF), exhibits comparable classification accuracy, interpretability, and low memor…
Hardware Functional Obfuscation With Ferroelectric Active Interconnects
Tonggunag Yu, Yixin Xu, Shan Deng +8
Camouflaging gate techniques are typically used in hardware security to prevent reverse engineering. Layout level camouflaging by adding dummy contacts ensures some level of protec…
Intrinsic synaptic plasticity of ferroelectric field effect transistors for online learning
Arnob Saha, A N M Nafiul Islam, Zijian Zhao +3
Nanoelectronic devices emulating neuro-synaptic functionalities through their intrinsic physics at low operating energies is imperative toward the realization of brain-like neuromo…
Logic Compatible High-Performance Ferroelectric Transistor Memory
Sourav Dutta, Huacheng Ye, Abhishek Khanna +11
Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limi…