60 citations · 133 across the 4 of their papers we have counts for
5 papers · 1 filter
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert +7
We critically review recent experimental and theoretical advances on the valence- and structure-mismatched heteroepitaxy of III-V semiconductors on group-IV substrates. We examine…
Band structure of the epitaxial Fe/MgO/GaAs(001) tunnel junction studied by X-ray and ultraviolet photoelectron spectroscopy
Y. Lu, J. C. Le Breton, P. Turban +3
The electronic band structure in the epitaxial Fe/MgO/GaAs(001) tunnel junction has been studied by X-ray and ultraviolet photoelectron spectroscopy measurements. The Schottky barr…
Zinc-Blende group III-V/group IV epitaxy: importance of the miscut
C. Cornet, S. Charbonnier, I. Lucci +15
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with t…
A universal description of III-V/Si epitaxial growth processes
I. Lucci, S. Charbonnier, L. Pedesseau +15
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stag…
Quantitative magnetic imaging at the nanometer scale by ballistic electron magnetic microscopy
Marie Hervé, Sylvain Tricot, Sophie Guézo +4
We demonstrate quantitative ballistic electron magnetic microscopy (BEMM) imaging of simple model Fe(001) nanostructures. We use in situ nanostencil shadow mask resistless patterni…