153 citations · 303 across the 13 of their papers we have counts for
13 papers
Nanoscale SrIrO Freestanding Thin-Films for Flexible Electronics
Sujan Shrestha, Matthew Coile, Menglin Zhu +7
We report the structural and optical properties of nanoscale Sr2IrO4 freestanding thin-films fabricated using a water-soluble Sr3Al2O6 layer. The coherent lattice structure, phonon…
Laser-Ablated Au Electrodes with Preferred Orientation and Flat Interface on Oxides
Ambrose Seo, Richard Lai, Sujan Shrestha +5
Gold (Au) thin-film electrodes deposited on oxides by pulsed laser deposition (PLD) exhibit distinctive structural properties compared with thermally evaporated Au films. While the…
Emergent Ferromagnetism at LaFeO3/SrTiO3 Interface Arising from Strain-induced Spin-State Transition
Menglin Zhu, Joseph Lanier, Sevim Polat Genlik +7
Creating new interfacial magnetic states with desired functionalities is attractive for fundamental studies and spintronics applications. The emergence of interfacial magnetic phas…
Unconventional Unidirectional Magnetoresistance in vdW Heterostructures
I-Hsuan Kao, Junyu Tang, Gabriel Calderon Ortiz +13
Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer syst…
Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy
Hyunseok Kim, Yunpeng Liu, Kuangye Lu +26
Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer gr…
Kinetically-controlled epitaxial growth of FeGeTe van der Waals ferromagnetic films
Wenyi Zhou, Alexander J. Bishop, Menglin Zhu +5
We demonstrate that kinetics play an important role in the epitaxial growth of FeGeTe (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying th…
Experimental determination of the valence band offsets of and with
Md Rezaul Karim, Brenton A. Noesges, Benthara Hewage Dinushi Jayatunga +6
A predicted type-II staggered band alignment with an approximately valence band offset at the heterointerface has inspired novel band-engineered $III-N/ZnGeN…
Field-free deterministic switching of a perpendicularly polarized magnet using unconventional spin-orbit torques in WTe2
I-Hsuan Kao, Ryan Muzzio, Hantao Zhang +13
Spin-orbit torque (SOT) driven deterministic control of the magnetization state of a magnet with perpendicular magnetic anisotropy (PMA) is key to next generation spintronic applic…
Coherent Growth and Characterization of van der Waals 1T-VSe Layers on GaAs(111)B Using Molecular Beam Epitaxy
Tiancong Zhu, Dante J. O'Hara, Brenton A. Noesges +7
We report epitaxial growth of vanadium diselenide (VSe) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thick…
Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBiSe
Tiancong Zhu, Alexander J. Bishop, Tong Zhou +12
The intrinsic magnetic topological insulators MnBiX (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magn…
Electrical Switching of Tristate Antiferromagnetic Néel Order in -FeO Epitaxial Films
Yang Cheng, Sisheng Yu, Menglin Zhu +2
The ability to manipulate antiferromagnetic (AF) moments is a key requirement for the emerging field of antiferromagnetic spintronics. Electrical switching of bi-state AF moments h…
Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/-FeO Bilayers
Yang Cheng, Sisheng Yu, Adam S. Ahmed +3
To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic m…
Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures
Shi Che, Petr Stepanov, Supeng Ge +13
The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic prop…